DocumentCode
2763491
Title
Fast Ge p-i-n Photodetectors on Si
Author
Kasper, Erich ; Oehme, Michael ; Werner, J. ; Jutzi, M. ; Berroth, Manfred
Author_Institution
Inst. fur Halbleitertechnik, Univ. Stuttgart
fYear
2006
fDate
15-17 May 2006
Firstpage
1
Lastpage
2
Abstract
We report about a top-side illuminated Ge photodetector, which is appropriate for transmission of high-speed data at infrared telecommunication wavelengths and is monolithically integrated on a standard Si substrate (Jutzi et al., 2005) for 1552 nm operation. A 3-dB-bandwidth of 38.9 GHz is achieved for a 10 mum diameter detector and a reverse bias of 2 V. These results demonstrate the potential of SiGe photodiodes for Si based optical links at data rates up to 40 Gbit/s and beyond
Keywords
Ge-Si alloys; elemental semiconductors; high-speed techniques; p-i-n photodiodes; photodetectors; 10 micron; 2 V; 38.9 GHz; SiGe; high-speed data transmission; infrared telecommunication wavelengths; p-i-n photodetectors; photodiodes; silicon based optical links; top-side illuminated photodetector; Doping; Electromagnetic wave absorption; Etching; Germanium silicon alloys; Lattices; Molecular beam epitaxial growth; PIN photodiodes; Photodetectors; Silicon germanium; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location
Princeton, NJ
Print_ISBN
1-4244-0461-4
Type
conf
DOI
10.1109/ISTDM.2006.246583
Filename
1715952
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