MBE Growth and Characterization of Three-Terminal Ge(dot)/SiGe(well) Near-Infrared Photodetectors

Author

Elfving, A. ; Karim, Asad ; Zhao, Mengying ; Hansson, G.V. ; Ni, W.-X.

Author_Institution

Dept. of Phys., Chem. & Biol., Linkoping Univ.

fYear

2006

fDate

15-17 May 2006

Firstpage

1

Lastpage

2

Abstract

The requirements of Si-based photonic devices in the next generation of chip technologies have caused extensive studies on Ge/Si quantum dot devices. In this communication, we report on lateral three-terminal FET type of photodetectors based on Ge dot layers sandwiched between SiGe QWs, where the near-infrared light was mainly absorbed in the Ge island layers. In addition to the source and drain contacts, a gate contact was implemented to control the carrier transfer along the layer stack direction. Very high photo-response was observed with a negative gate bias, accompanied with a significant increase of the carrier lifetime

Keywords

Ge-Si alloys; field effect transistors; germanium; molecular beam epitaxial growth; photodetectors; semiconductor quantum dots; semiconductor quantum wells; FET devices; MBE characterization; MBE growth; Si-based photonic devices; SiGe-Ge; carrier transfer control; near-infrared photodetector; negative gate bias; quantum dot devices; three-terminal photodetector; Charge carrier lifetime; Detectors; FETs; Germanium silicon alloys; Molecular beam epitaxial growth; Photoconductivity; Photodetectors; Silicon germanium; Superlattices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Conference_Location

Princeton, NJ

Print_ISBN

1-4244-0461-4

Type

conf

DOI

10.1109/ISTDM.2006.246585

Filename

1715954