DocumentCode :
2763560
Title :
Fabrication of Silicon on Lattice-Engineered Substrate (SOLES) as a Platform for Monolithic Integration of CMOS and Optoelectronic Devices
Author :
Dohrman, Carl L. ; Chilukuri, K. ; Isaacson, D.M. ; Lee, Minjoo Larry ; Fitzgerald, E.A.
Author_Institution :
Dept. of Mater. Sci. & Eng., Massachusetts Inst. of Technol., Cambridge, MA
fYear :
2006
fDate :
15-17 May 2006
Firstpage :
1
Lastpage :
2
Abstract :
We report the fabrication of a novel substrate platform for the monolithic integration of Si-based CMOS and GaAs-based optoelectronic devices. This platform, which we refer to as silicon on lattice-engineered substrate (SOLES), consists of a compositionally graded SiGe buffer buried underneath a silicon-on-insulator (SOI) structure, all fabricated on a Si substrate
Keywords :
CMOS integrated circuits; Ge-Si alloys; III-V semiconductors; gallium arsenide; integrated optoelectronics; silicon-on-insulator; wafer bonding; CMOS-optoelectronic devices integration; GaAs; SOLES; SiGe; monolithic integration; silicon on lattice-engineered substrate; silicon-on-insulator structure; substrate platform; Germanium silicon alloys; Materials science and technology; Monolithic integrated circuits; Optical device fabrication; Optoelectronic devices; Rough surfaces; Silicon alloys; Silicon germanium; Surface roughness; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
Type :
conf
DOI :
10.1109/ISTDM.2006.246586
Filename :
1715955
Link To Document :
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