Fabrication of Silicon on Lattice-Engineered Substrate (SOLES) as a Platform for Monolithic Integration of CMOS and Optoelectronic Devices

Author

Dohrman, Carl L. ; Chilukuri, K. ; Isaacson, D.M. ; Lee, Minjoo Larry ; Fitzgerald, E.A.

Author_Institution

Dept. of Mater. Sci. & Eng., Massachusetts Inst. of Technol., Cambridge, MA

fYear

2006

fDate

15-17 May 2006

Firstpage

1

Lastpage

2

Abstract

We report the fabrication of a novel substrate platform for the monolithic integration of Si-based CMOS and GaAs-based optoelectronic devices. This platform, which we refer to as silicon on lattice-engineered substrate (SOLES), consists of a compositionally graded SiGe buffer buried underneath a silicon-on-insulator (SOI) structure, all fabricated on a Si substrate

Keywords

CMOS integrated circuits; Ge-Si alloys; III-V semiconductors; gallium arsenide; integrated optoelectronics; silicon-on-insulator; wafer bonding; CMOS-optoelectronic devices integration; GaAs; SOLES; SiGe; monolithic integration; silicon on lattice-engineered substrate; silicon-on-insulator structure; substrate platform; Germanium silicon alloys; Materials science and technology; Monolithic integrated circuits; Optical device fabrication; Optoelectronic devices; Rough surfaces; Silicon alloys; Silicon germanium; Surface roughness; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Conference_Location

Princeton, NJ

Print_ISBN

1-4244-0461-4

Type

conf

DOI

10.1109/ISTDM.2006.246586

Filename

1715955