DocumentCode :
2763563
Title :
Scalable nonlinear resistor model for GaAs MMIC
Author :
Zhu, Yu ; Wei, Cejun ; Klimashov, Oleksiy ; Zhang, Cindy ; Tkachenko, Yevgeniy
Author_Institution :
Skyworks Solution Inc., Woburn
fYear :
2006
fDate :
12-15 Dec. 2006
Firstpage :
1539
Lastpage :
1542
Abstract :
A scalable nonlinear resistor model is proposed, which is suitable for epitaxial layer resistor on GaAs substrate commonly used in GaAs MMIC. Analytical expressions describing the geometry dependences of the model parameters are provided. The proposed scalable model, implemented into a circuit simulator, accurately predicts the DC, S parameter, and power performance of the resistors with various geometries. Approaches for improving resistor linearity are also described based on the proposed model.
Keywords :
III-V semiconductors; MMIC; epitaxial layers; gallium arsenide; resistors; MMIC; circuit simulator; scalable nonlinear resistor model; Circuits; Epitaxial layers; Gallium arsenide; Geometry; MMICs; Predictive models; Resistors; Semiconductor process modeling; Solid modeling; Substrates; Circuit simulation; DC measurement; GaAs MMIC; modeling; nonlinearities; resistors; scalability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2006. APMC 2006. Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-4-902339-08-6
Electronic_ISBN :
978-4-902339-11-6
Type :
conf
DOI :
10.1109/APMC.2006.4429699
Filename :
4429699
Link To Document :
بازگشت