Title :
Temperature-Dependent Admittance Analysis of HfO2 Gate Dielectrics on Nitrogen- and Sulfur-Passivated Ge
Author :
Koester, Steven J. ; Frank, Martin M. ; lsaacson, D.M. ; Hulling Shang
Author_Institution :
T. J. Watson Res. Center, IBM, Yorktown Heights, NY
Abstract :
In this work, we characterize MOS capacitors with HfO2 gate dielectrics that utilize sulfur (S) passivation formed by pre-treatment of the Ge surface in an aqueous (NH4)2 S solution before HfO2 deposition, and compare the results with those using the more-standard N-passivation. Using temperature-dependent admittance measurements, we find that the S-passivated samples have lower minimum Dit and reduced flat-band shift, but also display larger accumulation dispersion and hysteresis than N-passivated samples. Results of admittance spectroscopy analysis also suggest that the energy distributions of the interface states are fundamentally different in the two sample types
Keywords :
MOS capacitors; dielectric materials; electric admittance; hafnium compounds; passivation; (NH4)2S; Ge; HfO2; MOS capacitors; accumulation dispersion; admittance spectroscopy analysis; flat-band shift; gate dielectrics; sulfur passivation; temperature dependent admittance analysis; Admittance measurement; Dielectrics; Dispersion; Displays; Hafnium oxide; Hysteresis; Interface states; MOS capacitors; Passivation; Spectroscopy;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246587
