Title :
Thin Germanium-Carbon Layers on Silicon for Metal-Oxide-Semiconductor Devices
Author :
Kelly, D.Q. ; Wiedmann, I. ; Garcia Gutierrez, D.I. ; Yacaman, M.J. ; Banerjee, Sanjay K.
Author_Institution :
Microelectron. Res. Center, UT-Austin, Austin, TX
Abstract :
Germanium-carbon alloys (Ge1-xCx) were first deposited on Si (100) by chemical vapor deposition using precursors containing Ge-C bonds. The stated objective of that work was to explore Ge1-xCx as a potentially lattice-matched system with Si capable of bandgap engineering. In step with renewed interest in Ge MOSFET devices due to the advent of high-kappa dielectrics, our group has revisited Ge1-xCx recently, and for the first time demonstrated pMOSFETs with enhanced hole mobility fabricated on thin (30 nm) Ge1-xCxlayers deposited directly on Si. This abstract presents previously unreported yet relevant materials-related details of the Ge1-xCx films. The key result is that the Ge1-xCx films exhibit remarkably low threading dislocation densities despite significant strain relaxation
Keywords :
CVD coatings; MIS devices; MOSFET; dielectric materials; dislocation density; germanium compounds; hole mobility; semiconductor materials; semiconductor thin films; silicon; 30 nm; Ge1-xCx films; GeC; MOSFET devices; Si; bandgap engineering; chemical vapor deposition; dislocation density; germanium-carbon layer; high-kappa dielectrics; lattice-matched system; metal-oxide-semiconductor devices; pMOSFET devices; strain relaxation; Atomic force microscopy; Capacitive sensors; Chemical vapor deposition; Etching; Helium; Inductors; MOS devices; Silicon; Substrates; Transmission electron microscopy;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246590
