Title :
Proton Radiation Tolerance of SiGe Power HBTs
Author :
Ningyue Jiang ; Zhenqiang Ma ; Pingxi Ma ; Racanelli, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI
Abstract :
The performance of SiGe HBTs has been dramatically improved due to scaling and device structure optimization. This work reports the proton radiation effects on SiGe power HBTs manufactured in a commercial BiCMOS process. Besides DC and small-signal AC characteristics, for the first time, the proton radiation tolerance of the large-signal high power performance characteristics of SiGe power HBTs was investigated
Keywords :
Ge-Si alloys; MIS structures; heterojunction bipolar transistors; power bipolar transistors; proton detection; tolerance analysis; DC characteristic; SiGe; SiGe power HBT; commercial BiCMOS process; device structure optimization; large-signal high power performance; proton radiation tolerance; small-signal AC characteristics; Degradation; Electrical resistance measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance; Performance evaluation; Power measurement; Protons; Radio frequency; Silicon germanium;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246592
