Title :
SiGe:C Epi Processes with Improved Robustness Against Uncontrolled Oxygen Incorporation
Author :
Loo, Roger ; Janssens, T. ; Pikulin, M. ; Miller, G.
Author_Institution :
IMEC, Leuven
Abstract :
The availability of ultra clean MMS enables the deposition of epitaxial SiGe:C with low oxygen levels without using a purifier in the MMS gas line is discussed in this paper. This improves the robustness of epitaxial production processes. The reproducibility in gas composition of the MMS/H2mixture, which circumvents the need for process re-qualification after bottle replacement, is also demonstrated
Keywords :
Ge-Si alloys; carbon; epitaxial growth; semiconductor epitaxial layers; SiGe:C; SiGe:C epi processes; epitaxial SiGe:C; epitaxial production processes; low oxygen levels; ultra clean MMS; uncontrolled oxygen incorporation; Contamination; Fabrication; Gases; Germanium silicon alloys; Heterojunction bipolar transistors; MOS devices; Oxygen; Pollution measurement; Robustness; Silicon germanium;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246593
