• DocumentCode
    2763711
  • Title

    SiGe:C Epi Processes with Improved Robustness Against Uncontrolled Oxygen Incorporation

  • Author

    Loo, Roger ; Janssens, T. ; Pikulin, M. ; Miller, G.

  • Author_Institution
    IMEC, Leuven
  • fYear
    2006
  • fDate
    15-17 May 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The availability of ultra clean MMS enables the deposition of epitaxial SiGe:C with low oxygen levels without using a purifier in the MMS gas line is discussed in this paper. This improves the robustness of epitaxial production processes. The reproducibility in gas composition of the MMS/H2mixture, which circumvents the need for process re-qualification after bottle replacement, is also demonstrated
  • Keywords
    Ge-Si alloys; carbon; epitaxial growth; semiconductor epitaxial layers; SiGe:C; SiGe:C epi processes; epitaxial SiGe:C; epitaxial production processes; low oxygen levels; ultra clean MMS; uncontrolled oxygen incorporation; Contamination; Fabrication; Gases; Germanium silicon alloys; Heterojunction bipolar transistors; MOS devices; Oxygen; Pollution measurement; Robustness; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    1-4244-0461-4
  • Type

    conf

  • DOI
    10.1109/ISTDM.2006.246593
  • Filename
    1715962
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2763711