Title :
Strained-Si nMOSFETs with Ni Silicide
Author :
Yen Ping Wang ; San Lein Wu ; Shoou Jinn Chang
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan
Abstract :
In this paper, the optimum STI process and Ni silicide has proposed to realize the strained-Si nMOSFET. Device sizes dependence of Ni germanosilicide on sheet resistance and current drivability of both strained-Si and Si-control nMOSFETs were studied and compared
Keywords :
MOSFET; isolation technology; nickel compounds; silicon; Ni germanosilicide; Ni silicide; NiSiO; STI process; current drivability; sheet resistance; strained-Si nMOSFET; CMOS process; Circuits; Displays; Electron devices; Fabrication; MOSFETs; Microelectronics; Microprocessors; Silicides; Strain control;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246595
