A new physical model for NVM data-retention time-to-failure

Author

De Salvo, B. ; Ghibaudo, G. ; Pananakakis, G. ; Guillaumot, B. ; Candelier, P. ; Reimbold, G.

Author_Institution

Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France

fYear

1999

fDate

1999

Firstpage

19

Lastpage

23

Abstract

A new physical model for nonvolatile memory (NVM) data-retention time-to-failure is proposed. In this model, retention-time t_r, namely log(t_r), varies linearly with temperature T rather than with 1/T, as commonly assumed. The main consequence of the T-model is a drastic reduction of the extrapolated time-to-failure in highly temperature accelerated life-testing. Extensive experimental studies strongly support the T-model. The physical consistency of the T-model and its literature-data unifying character are demonstrated

Keywords

EPROM; failure analysis; integrated circuit modelling; integrated circuit reliability; integrated circuit testing; integrated memory circuits; life testing; EPROM; NVM data-retention time-to-failure; T-model; data-retention; extrapolated time-to-failure; highly temperature accelerated life-testing; nonvolatile memory; physical model; retention-time; time-to-failure; Acceleration; Dielectric losses; Failure analysis; Linear predictive coding; Microelectronics; Nonvolatile memory; Performance evaluation; Temperature; Threshold voltage; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International

Conference_Location

San Diego, CA

Print_ISBN

0-7803-5220-3

Type

conf

DOI

10.1109/RELPHY.1999.761586

Filename

761586