Title :
Determination of the Surface Segregation Ratio of P in Si
Author :
Thompson, P.E. ; Jernigan, G.G.
Author_Institution :
Electron. Sci. & Technol. Div., Naval Res. Lab., Washington, DC
Abstract :
We have determined the surface segregation ratio for P in Si in the temperature interval 380 degC to 650 degC. Using P from the sublimation of GaP, the values determined are approximately a factor of 10 less than those previously reported using evaporation from a P-doped Si source. Even at the lowest growth temperature, the deposited P is electrically active, so these results are applicable to device fabrication processes
Keywords :
doping profiles; molecular beam epitaxial growth; phosphorus; silicon; sublimation; surface segregation; 380 to 650 C; Si:P; device fabrication processes; molecular beam epitaxial growth; surface segregation; Doping; Epitaxial growth; Laboratories; Molecular beam epitaxial growth; Quantum computing; Solids; Substrates; Surface fitting; Temperature measurement; Tunneling;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246597
