Title :
Effect of C Incorporation on the Growth Kinetics of Si1-x- yGexCy Layers
Author :
Kim, H.-W. ; Choi, Soon-Mi ; Hong, Seong-Kwan ; Jung, H.K. ; Lee, Gi-Dong ; Kim, C.S. ; Yoon, Eunchul
Author_Institution :
Sch. of Mater. Sci. & Eng., Seoul Nat. Univ.
Abstract :
In this article, SiGeC layers were grown on Si by ultra-high vacuum CVD (UHVCVD) and the growth kinetics of SiGeC layer were investigated by varying methylsilane flow rate and growth temperature. We investigated the incorporation behavior of C and observed the two-step growth kinetics due to strong C-H bonds and non-substitutional C incorporation
Keywords :
Ge-Si alloys; association; carbon; chemical vapour deposition; semiconductor growth; SiGeC-Si; growth kinetics; growth temperature; incorporation behavior; methylsilane flow rate; ultra-high vacuum CVD; Atomic force microscopy; Atomic layer deposition; Capacitive sensors; Kinetic theory; Molecular beam epitaxial growth; Rough surfaces; Substrates; Surface morphology; Surface roughness; Temperature;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246599
