Title :
Interconnect and MOS transistor degradation at high current densities
Author :
Neugroschel, Arnost ; Sah, Chih-Tang
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
New MOS transistor and metal contact/interconnect degradation mechanisms at high current densities (HJ) and low voltages (<1 V) and their correlation are discussed. The new degradation pathway is started by metal-hydrogen bond breaking at the metal/silicon contact or along the metal interconnect lines and then followed by hydrogen diffusion to the SiO2-Si interface, where it can generate interface traps by a hydrogen reduction reaction. Microscopic model and kinetic data on the current density and temperature dependence of the MOST and interconnect degradation are discussed
Keywords :
MOS integrated circuits; MOSFET; bonds (chemical); current density; diffusion; electrical contacts; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; interface states; semiconductor device reliability; semiconductor device testing; 1 V; H; MOS transistor degradation; MOS transistor degradation mechanisms; SiO2-Si; SiO2-Si interface; current density; degradation pathway; hydrogen diffusion; hydrogen reduction reaction; interconnect degradation; interconnect degradation mechanisms; interface traps; kinetic data; metal contact degradation mechanisms; metal interconnect lines; metal-hydrogen bond breaking; metal/silicon contact; microscopic model; temperature dependence; Current density; Degradation; Diffusion bonding; Hydrogen; Kinetic theory; Low voltage; MOSFETs; Microscopy; Silicon; Temperature dependence;
Conference_Titel :
Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-5220-3
DOI :
10.1109/RELPHY.1999.761588