• DocumentCode
    2763798
  • Title

    ZnO-ZnTe nanocone heterojunctions for efficient carrier transport for photovoltaic conversion

  • Author

    Lee, Sang Hyun ; Zhang, X.-G. ; Smith, Barton ; Howe, Jane ; Xu, Jun

  • Author_Institution
    Oak Ridge Nat. Lab., Oak Ridge, TN, USA
  • fYear
    2010
  • fDate
    20-25 June 2010
  • Abstract
    Vertically aligned ZnO nanocones were synthesized as cores by utilizing the growth rate difference between terrace and edge sites of nucleation domain during thermal vapor deposition. The p-n junctions were formed by subsequent growth of ZnTe as shells on the nanocone surface using PLD. The polycrystalline structures were observed for ZnTe shells, while the wurzite structure was shown for ZnO cores. Typical I-V characteristics of p-n junction were obtained for the nanocone core-shell structure, but not for the nanorod structure. These structural and electric characteristics indicate that ZnO nanocones are more feasible than ZnO nanorods as practical heterojunctions because the sloping facets of the nanocones facilitate deposition of ZnTe by PLD without the deleterious effects of shadowing. Furthermore, based on theoretical modeling of nanostructure heterojunctions, the nanocone-based junction exhibits an electrostatic potential profile that is much more effective for carrier transport than the electrostatic potential for the nanorod-based junction.
  • Keywords
    nanostructured materials; programmable logic devices; solar cells; thermal analysis; zinc compounds; PLD; ZnO; ZnTe; carrier transport; edge sites; electrostatic potential profile; l-V characteristic; nanocone core-shell structure; nanocone heterojunctions; nanorod structure; nanorod-based junction; nanostructure heterojunctions; nucleation domain; p-n junction; photovoltaic conversion; photovoltaic solar cells; polycrystalline structure; sloping facets; theoretical modeling; thermal vapor deposition; wurzite structure;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-5890-5
  • Type

    conf

  • DOI
    10.1109/PVSC.2010.5615943
  • Filename
    5615943