Title :
Growth of Strain-Relaxed Si1-yCy Films with Step Carbon Composition by Gas Source MBE
Author :
Ishihara, H. ; Murano, M. ; Yamada, Akimasa ; Konagai, Makoto
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol.
Abstract :
The three stacked Si1-yCy layers with various carbon compositions have been grown by a gas-source MBE system at a temperature of 620degC. The structure is a promising candidate as a virtual substrate for the growth of a compressively-strained Si layer on Si in order to enhance the electron mobility towards the vertical direction. The (004) XRD pattern of the sample consisted of three peaks from the Si1-yCy layers and the relaxation of the layers was confirmed. From (115) reciprocal lattice space map, the relaxation ratio of the three layers was calculated and it was found that the ratios were 0, 12 and 60% from the bottom layer to the top layer. These results showed the high potential of the structure as a vertical substrate for the Si technology
Keywords :
electron mobility; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; silicon compounds; substrates; surface composition; wide band gap semiconductors; (004) XRD pattern; (115) reciprocal lattice; 620 C; SiC; carbon composition; electron mobility; gas source MBE; strain-relaxed films; vertical substrate; virtual substrate; Buffer layers; Lattices; MOSFET circuits; Molecular beam epitaxial growth; Nanoelectronics; Optical films; Semiconductor films; Semiconductor materials; Substrates; X-ray scattering;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246601
