Title :
Off-state stress-induced reduction of off-state current in polycrystalline silicon thin film transistors
Author :
Krishnan, Anand T. ; Fonash, Stephen J.
Author_Institution :
Electron. Mater. & Process. Res. Lab., Pennsylvania State Univ., University Park, PA, USA
Abstract :
The off-state stress response of n and p channel poly-Si TFTs was studied as a function of the poly-Si crystallization and defect passivation approaches using I-V and C-V measurements. Both n- and p-TFTs were found to exhibit lower Ioff after far-off state stress. TFTs of all processing splits show off-current reduction after off-state stress. A metastable component to this Ioff reduction was identified. We show that n-TFTs show Ioff reduction due to shielding states creation, while p-TFTs show Ioff reduction due to a reduction in generation
Keywords :
capacitance; crystallisation; electric current; elemental semiconductors; passivation; semiconductor device reliability; silicon; thin film transistors; C-V measurements; I-V measurements; Si; defect passivation; far-off state stress; metastable off-state current component; n channel poly-Si TFTs; n-TFTs; off-current reduction; off-state stress; off-state stress response; p channel poly-Si TFTs; p-TFTs; poly-Si crystallization; polycrystalline silicon thin film transistors; processing splits; shielding states creation; stress-induced off-state current reduction; Crystalline materials; Crystallization; Laboratories; Laser theory; Plasma measurements; Semiconductor thin films; Silicon; Stress measurement; Thin film transistors; Voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-5220-3
DOI :
10.1109/RELPHY.1999.761590
