DocumentCode :
2763851
Title :
Effects of Mechanical Uniaxial Stress on SiGe HBT Characteristics
Author :
Tzu-Juei Wang ; Hung-Wei Chen ; Chih-Hsin Ko ; John Yeh ; Ping-Chun Yeh ; Shoou-Jinn Chang ; San-Lein Wu ; Wen-Chin Lee ; Tang, D.D.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan
fYear :
2006
fDate :
15-17 May 2006
Firstpage :
1
Lastpage :
2
Abstract :
In this work, we investigate the characteristics of collector current (IC) and breakdown voltage (BVCEO) of SiGe HBTs under the mechanical uniaxial stress by a four-point bending apparatus. DeltaIc and DeltaBVCEO is found to be strain-polarity dependent, and there is a trade-off between DeltaI c and DeltaBVCEO at the same stress condition
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device breakdown; stress effects; HBT characteristics; SiGe; breakdown voltage; collector current; four-point bending apparatus; mechanical uniaxial stress; BiCMOS integrated circuits; CMOS technology; Compressive stress; Germanium silicon alloys; Heterojunction bipolar transistors; Microelectronics; Photonic band gap; Silicon germanium; Stress control; Tensile stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
Type :
conf
DOI :
10.1109/ISTDM.2006.246602
Filename :
1715971
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2763851
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