DocumentCode :
2763867
Title :
The Interface Properties of SiO2/Strained-Si with Carbon Incorporation Surface Channel MOSFETs
Author :
Lee, Moon Ho ; Chang, S.T. ; Maikap, S. ; Yu, C.-Y. ; Liu, C.W.
Author_Institution :
Display Technol. Center, Ind. Technol. Res. Inst., Hsinchu
fYear :
2006
fDate :
15-17 May 2006
Firstpage :
1
Lastpage :
2
Abstract :
To lower C content can keep performance enhancement of strained-Si:C devices since it minimizes the alloy scattering potential, interstitial trap and Dit. The large Dit at oxide/strained-Si:C interface degrades the expected carrier mobility enhancement, but improvement is observed after forming gas annealing. The strained-Si:C channel makes it possible to have high speed devices, improved short channel effect, and extremely shallow S/D junctions
Keywords :
MOSFET; annealing; carbon; carrier mobility; interface roughness; interstitials; silicon; silicon compounds; Si:C; SiO2-Si; alloy scattering potential; carbon incorporation; carrier mobility enhancement; gas annealing; interface properties; interstitial trap; performance enhancement; short channel effect; surface channel MOSFET; Annealing; Buffer layers; Capacitive sensors; Degradation; Germanium silicon alloys; Interface states; MOSFET circuits; Rough surfaces; Silicon germanium; Surface roughness;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
Type :
conf
DOI :
10.1109/ISTDM.2006.246603
Filename :
1715972
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2763867
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