• DocumentCode
    2763867
  • Title

    The Interface Properties of SiO2/Strained-Si with Carbon Incorporation Surface Channel MOSFETs

  • Author

    Lee, Moon Ho ; Chang, S.T. ; Maikap, S. ; Yu, C.-Y. ; Liu, C.W.

  • Author_Institution
    Display Technol. Center, Ind. Technol. Res. Inst., Hsinchu
  • fYear
    2006
  • fDate
    15-17 May 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    To lower C content can keep performance enhancement of strained-Si:C devices since it minimizes the alloy scattering potential, interstitial trap and Dit. The large Dit at oxide/strained-Si:C interface degrades the expected carrier mobility enhancement, but improvement is observed after forming gas annealing. The strained-Si:C channel makes it possible to have high speed devices, improved short channel effect, and extremely shallow S/D junctions
  • Keywords
    MOSFET; annealing; carbon; carrier mobility; interface roughness; interstitials; silicon; silicon compounds; Si:C; SiO2-Si; alloy scattering potential; carbon incorporation; carrier mobility enhancement; gas annealing; interface properties; interstitial trap; performance enhancement; short channel effect; surface channel MOSFET; Annealing; Buffer layers; Capacitive sensors; Degradation; Germanium silicon alloys; Interface states; MOSFET circuits; Rough surfaces; Silicon germanium; Surface roughness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    1-4244-0461-4
  • Type

    conf

  • DOI
    10.1109/ISTDM.2006.246603
  • Filename
    1715972
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2763867