Field dependent critical trap density for thin gate oxide breakdown

Author

Cheung, K.P. ; Liu, C.T. ; Chang, C.P. ; Colonell, J.I. ; Lai, W.Y.-C. ; Liu, R. ; Miner, J.F. ; Pai, C.S. ; Vaidya, H. ; Clemens, J.T. ; Hasegawa, E.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1999

fDate

1999

Firstpage

52

Lastpage

56

Abstract

We have found that the total trapped negative charge in a thin gate-oxide at the point of breakdown is a strong function of the stress field. This observation is in direct contrast with previous reports in the literature. The field dependent behavior of total trapped charge leads to the conclusion that the critical trap density for breakdown is also field dependent. We use field dependent hopping conduction to explain why the critical trap density for breakdown in the percolation model should be field dependent

Keywords

dielectric thin films; electric breakdown; electric fields; electron traps; electronic density of states; hopping conduction; integrated circuit reliability; integrated circuit testing; percolation; breakdown; breakdown point; critical trap density; field dependent critical trap density; field dependent hopping conduction; field dependent total trapped charge behaviour; field dependent trap density; percolation model; stress field; thin gate oxide breakdown; thin gate-oxide; total trapped negative charge; Breakdown voltage; Charge carrier processes; Design for quality; Electric breakdown; Electron traps; History; Laboratories; Stress; Testing; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International

Conference_Location

San Diego, CA

Print_ISBN

0-7803-5220-3

Type

conf

DOI

10.1109/RELPHY.1999.761592

Filename

761592