• DocumentCode
    2763905
  • Title

    A study of Boron Concentration Uniformity in Selective Epitaxial Growth for SiGe HBT

  • Author

    Eguchi, S. ; Miyashita, I. ; Kagotoshi, Y. ; Toyoda, Hajime ; Kanai, Atsushi ; Machida, N.

  • Author_Institution
    Renesas Technol. Corp., Takasaki
  • fYear
    2006
  • fDate
    15-17 May 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We present here a study of in-wafer uniformity of in-situ boron concentration in SiGe:C epitaxial layers by SEG. One of the robust designs, the Taguchi method, is used to optimize both uniformity of boron concentration and that of SiGe:C layer thickness with blanket wafers at the same time
  • Keywords
    Ge-Si alloys; Taguchi methods; boron; heterojunction bipolar transistors; semiconductor doping; semiconductor epitaxial layers; HBT; SiGe:C; Taguchi method; boron concentration uniformity; epitaxial layers; in-wafer uniformity; selective epitaxial growth; Boron; Conductivity; Design optimization; Electrical resistance measurement; Epitaxial growth; Germanium silicon alloys; Heterojunction bipolar transistors; Robustness; Silicon germanium; Thickness measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    1-4244-0461-4
  • Type

    conf

  • DOI
    10.1109/ISTDM.2006.246605
  • Filename
    1715974
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2763905