Title :
A study of Boron Concentration Uniformity in Selective Epitaxial Growth for SiGe HBT
Author :
Eguchi, S. ; Miyashita, I. ; Kagotoshi, Y. ; Toyoda, Hajime ; Kanai, Atsushi ; Machida, N.
Author_Institution :
Renesas Technol. Corp., Takasaki
Abstract :
We present here a study of in-wafer uniformity of in-situ boron concentration in SiGe:C epitaxial layers by SEG. One of the robust designs, the Taguchi method, is used to optimize both uniformity of boron concentration and that of SiGe:C layer thickness with blanket wafers at the same time
Keywords :
Ge-Si alloys; Taguchi methods; boron; heterojunction bipolar transistors; semiconductor doping; semiconductor epitaxial layers; HBT; SiGe:C; Taguchi method; boron concentration uniformity; epitaxial layers; in-wafer uniformity; selective epitaxial growth; Boron; Conductivity; Design optimization; Electrical resistance measurement; Epitaxial growth; Germanium silicon alloys; Heterojunction bipolar transistors; Robustness; Silicon germanium; Thickness measurement;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246605
