Title :
Enhancement of Hole Mobility and Carrier Density in Ge Quantum Well SiGe Heterostructure via Implementation of Double-Sides Doping
Author :
Myronov, M. ; Sawano, Kentarou ; Shiraki, Yasuhiro
Author_Institution :
Res. Center for Silicon Nano-Sci., Musashi Inst. of Technol., Tokyo
Abstract :
In this paper we report on experimentally obtained enhancement of hole mobility and sheet carrier density in Ge QW modulation doped (MOD) SiGe heterostructure via implementation of symmetric double-sides modulation doping
Keywords :
Ge-Si alloys; carrier density; germanium; hole mobility; semiconductor doping; semiconductor quantum wells; SiGe:Ge; carrier density; double-sides doping; hole mobility; modulation doping; quantum well; Charge carrier density; Doping; Epitaxial layers; Germanium silicon alloys; Hall effect; Molecular beam epitaxial growth; Silicon germanium; Substrates; Surface morphology; Temperature;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246609
