Reexamination of fluorine incorporation into SiO2-significant improvement of charge-to-breakdown distribution tail

We demonstrate for the first time that an appropriate fluorine (F) incorporation into SiO₂ can drastically improve the Q_bd distribution tail on the Weibull plot. From the experimental results, it is indicated that both the strain release and the restructuring of the SiO₂ by F incorporation is responsible for Q_bd improvement of weaker oxides. Furthermore, we propose that there are two critical defect densities for the dielectric breakdown, which are caused by intrinsic defects and extrinsic defects which induce accidental failure