Reliability of passivated 0.15 μm InAlAs-InGaAs HEMTs with pseudomorphic channel

Author

Dammann, M. ; Chertouk, M. ; Jantz, W. ; Kohler, K. ; Schmidt, K.H. ; Weimann, G.

Author_Institution

Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany

fYear

1999

fDate

1999

Firstpage

99

Lastpage

102

Abstract

Accelerated life tests of 0.15 μm gate length InAlAs-InGaAs HEMTs were performed under DC electrical stress at four temperatures in nitrogen. By defining a 10% transconductance degradation as the failure criterion, we found an activation energy of 1.8 eV and a projected lifetime of 5×10⁶ hrs at 125° ambient temperature. The degradation was found to be much faster in air than in nitrogen. High temperature storage tests showed that our devices are not sensitive to hydrogen

Keywords

III-V semiconductors; aluminium compounds; environmental testing; failure analysis; gallium arsenide; high electron mobility transistors; indium compounds; life testing; passivation; semiconductor device reliability; semiconductor device testing; thermal stresses; 0.15 micron; 1.8 eV; 125 C; 5000000 hr; DC electrical stress; H₂; InAlAs-InGaAs; InAlAs-InGaAs HEMTs; N₂; accelerated life test temperature; accelerated life tests; activation energy; air atmosphere; ambient temperature; failure criterion; gate length; high temperature storage tests; hydrogen atmosphere; nitrogen atmosphere; passivated InAlAs-InGaAs HEMTs; projected lifetime; pseudomorphic channel HEMTs; reliability; transconductance degradation; Degradation; HEMTs; Life estimation; Life testing; MODFETs; Nitrogen; Performance evaluation; Stress; Temperature sensors; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International

Conference_Location

San Diego, CA

Print_ISBN

0-7803-5220-3

Type

conf

DOI

10.1109/RELPHY.1999.761599

Filename

761599