Reliability evaluation of MOCVD grown AlInAs-GaInAs-InP HEMTs

Author

Nawaz, M. ; Strupinski, W. ; Stenarson, J. ; Persson, S.H.M. ; Zirath, H.

Author_Institution

Dept. of Microelectron., Chalmers Univ. of Technol., Goteborg, Sweden

fYear

1999

fDate

1999

Firstpage

103

Lastpage

109

Abstract

We report on the reliability evaluation of MOCVD grown single and double delta doped AlInAs-GaInAs-InP HEMTs. It is found that HEMTs with thin InP top surface layer provide high threshold voltage uniformity, and less thermal stress degradation compared to conventional AlInAs-GaInAs-InP HEMTs. Furthermore, hot electron stress measurements have been conducted on passivated and unpassivated HEMTs. A temporary negative shift in the threshold voltage for unpassivated HEMTs and permanent negative shift in the threshold voltage for passivated HEMTs has been obtained. The shift in the threshold voltage is related to the build-up of holes inside the Schottky layer (temporary) and/or at the semiconductor-passivation layer interface (permanent)

Keywords

III-V semiconductors; MOCVD; Schottky barriers; aluminium compounds; gallium arsenide; high electron mobility transistors; hot carriers; indium compounds; interface states; passivation; semiconductor device reliability; semiconductor device testing; vapour phase epitaxial growth; AlInAs-GaInAs-InP; AlInAs-GaInAs-InP HEMTs; HEMTs; MOCVD; MOCVD grown AlInAs-GaInAs-InP HEMTs; Schottky layer hole build-up; double delta doped AlInAs-GaInAs-InP HEMTs; hot electron stress measurements; negative threshold voltage shift; passivated HEMTs; reliability; semiconductor-passivation layer interface; single delta doped AlInAs-GaInAs-InP HEMTs; thermal stress degradation; thin InP top surface layer; threshold voltage uniformity; unpassivated HEMTs; Degradation; Doping; HEMTs; Indium phosphide; Lattices; MOCVD; MODFETs; Ohmic contacts; Thermal stresses; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International

Conference_Location

San Diego, CA

Print_ISBN

0-7803-5220-3

Type

conf

DOI

10.1109/RELPHY.1999.761600

Filename

761600