A GaAs pHEMT based V-band balanced amplifier using uniplanar tandem couplers

Author

Moon, Sung-Woon ; Han, Min ; Oh, Jung-Hun ; Kwon, Hyuk-Ja ; Park, Hyun-Chang ; Rhee, Jin-Koo ; Kim, Sam-Dong

Author_Institution

Dongguk Univ., Seoul

fYear

2006

fDate

12-15 Dec. 2006

Firstpage

1657

Lastpage

1610

Abstract

In this work, single-ended and balanced amplifiers for operation at V-band (50 ~ 75 GHz) were designed and fabricated using the CPW library and 0.1-mum Gamma-gate GaAs pHEMT MMIC technology. The single-ended amplifier fabricated in a 1.8 X 1.1 mm area, shows the gain of about 14 dB around 60 GHz. The fabricated balanced amplifier using the uniplanar tandem directional couplers shows the gain of 6.5-14 dB with better return-losses and stability than those of the single-ended amplifier from 55 to 65 GHz. The uniplanar tandem directional couplers can be effectively combined with millimeter-wave active circuits.

Keywords

III-V semiconductors; MMIC amplifiers; coplanar waveguides; coupled circuits; gallium arsenide; high electron mobility transistors; CPW library fabrication; MMIC technology; frequency 55 GHz to 65 GHz; millimeter-wave active circuits; pHEMT based V-band balanced amplifier; single-ended amplifiers; uniplanar tandem directional couplers; Circuit stability; Coplanar waveguides; Directional couplers; Gain; Gallium arsenide; Libraries; MMICs; Millimeter wave circuits; Operational amplifiers; PHEMTs; GaAs pHEMT; Tandem coupler; balanced amplifier; stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. APMC 2006. Asia-Pacific

Conference_Location

Yokohama

Print_ISBN

978-4-902339-08-6

Electronic_ISBN

978-4-902339-11-6

Type

conf

DOI

10.1109/APMC.2006.4429726

Filename

4429726