• DocumentCode
    2764081
  • Title

    Hole Tunneling Properties in Resonant Tunneling Diodes with Si/Strained Si0.8Ge0.2Heterostructures Grown on Si

  • Author

    Ito, Ryouta ; Sakuraba, Masao ; Murota, Junichi

  • Author_Institution
    Res. Inst. of Electr. Commun., Tohoku Univ., Sendai
  • fYear
    2006
  • fDate
    15-17 May 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this work, we revised fabrication process parameters (e.g., Ge fraction and growth temperature) and performed electrical measurements for high quality RTD with improved crystallinity. As a result, we could investigate relationships between structural parameters and hole tunneling properties in the fabricated RTDs
  • Keywords
    Ge-Si alloys; chemical vapour deposition; epitaxial growth; resonant tunnelling diodes; substrates; Si-Si0.8Ge0.2-Si; electrical measurements; hole tunneling properties; low-temperature ultraclean LPCVD; resonant tunneling diodes; Contacts; Crystallization; Electrodes; Epitaxial growth; Etching; Fabrication; Plasma temperature; Resonant tunneling devices; Semiconductor diodes; Structural engineering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    1-4244-0461-4
  • Type

    conf

  • DOI
    10.1109/ISTDM.2006.246487
  • Filename
    1715981
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2764081