Title :
Hole Tunneling Properties in Resonant Tunneling Diodes with Si/Strained Si0.8Ge0.2Heterostructures Grown on Si
Author :
Ito, Ryouta ; Sakuraba, Masao ; Murota, Junichi
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai
Abstract :
In this work, we revised fabrication process parameters (e.g., Ge fraction and growth temperature) and performed electrical measurements for high quality RTD with improved crystallinity. As a result, we could investigate relationships between structural parameters and hole tunneling properties in the fabricated RTDs
Keywords :
Ge-Si alloys; chemical vapour deposition; epitaxial growth; resonant tunnelling diodes; substrates; Si-Si0.8Ge0.2-Si; electrical measurements; hole tunneling properties; low-temperature ultraclean LPCVD; resonant tunneling diodes; Contacts; Crystallization; Electrodes; Epitaxial growth; Etching; Fabrication; Plasma temperature; Resonant tunneling devices; Semiconductor diodes; Structural engineering;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246487
