Title :
Efficiency enhancement InGaP/GaAs dual-junction solar cell with sub-wavelength antireflection nanorod arrays
Author :
Wang, H.W. ; Tsai, M.A. ; Chen, H.C. ; Tsai, Y.L. ; Tseng, P.C. ; Jang, C.Y. ; Yu, Peichen ; Kuo, H.C.
Author_Institution :
Dept. of Photonics & Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The enhanced conversion efficiency of the InGaP/GaAs dual-junction solar cell was demonstrated antireflection nanorod arrays. After self-assembled Ni clusters ,the nanorod arrays were fabricated by inductively-coupled-plasma reactive ion etching. The conversion efficiency were measured under one-sun air mass 1.5 global illuminations at room temperature. The short current of the nanorod arrays cell was enhanced 10.0% and the efficiency was enhanced 10.8%. We were also studied the light absorption efficiencies of the top InGaP and bottom GaAs cells under the influence of nanorod arrays. Surface nanorod arrays were not only as antireflection layers but also scattering sources. The nanorod arrays structure can be significant improved the maximum conversion efficiency.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; light absorption; nanorods; self-assembly; solar cells; sputter etching; InGaP-GaAs; antireflection layers; dual-junction solar cell; global illuminations; inductively-coupled-plasma reactive ion etching; light absorption efficiency; self-assembled Ni clusters; short current; sub-wavelength antireflection nanorod arrays; temperature 293 K to 298 K;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-5890-5
DOI :
10.1109/PVSC.2010.5615959
