Efficiency enhancement InGaP/GaAs dual-junction solar cell with sub-wavelength antireflection nanorod arrays

Author

Wang, H.W. ; Tsai, M.A. ; Chen, H.C. ; Tsai, Y.L. ; Tseng, P.C. ; Jang, C.Y. ; Yu, Peichen ; Kuo, H.C.

Author_Institution

Dept. of Photonics & Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2010

fDate

20-25 June 2010

Abstract

The enhanced conversion efficiency of the InGaP/GaAs dual-junction solar cell was demonstrated antireflection nanorod arrays. After self-assembled Ni clusters ,the nanorod arrays were fabricated by inductively-coupled-plasma reactive ion etching. The conversion efficiency were measured under one-sun air mass 1.5 global illuminations at room temperature. The short current of the nanorod arrays cell was enhanced 10.0% and the efficiency was enhanced 10.8%. We were also studied the light absorption efficiencies of the top InGaP and bottom GaAs cells under the influence of nanorod arrays. Surface nanorod arrays were not only as antireflection layers but also scattering sources. The nanorod arrays structure can be significant improved the maximum conversion efficiency.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; light absorption; nanorods; self-assembly; solar cells; sputter etching; InGaP-GaAs; antireflection layers; dual-junction solar cell; global illuminations; inductively-coupled-plasma reactive ion etching; light absorption efficiency; self-assembled Ni clusters; short current; sub-wavelength antireflection nanorod arrays; temperature 293 K to 298 K;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE

Conference_Location

Honolulu, HI

ISSN

0160-8371

Print_ISBN

978-1-4244-5890-5

Type

conf

DOI

10.1109/PVSC.2010.5615959

Filename

5615959