• DocumentCode
    2764137
  • Title

    Formation of High Quality Strained-Si / Strained-SiGe Layers Grown on Relaxed SiGe Virtual Substrates for Advanced CMOS Application

  • Author

    In-kyum Kim ; Suk-june Kang ; Hyung-sang Yuk ; Dong-kun Lee ; Bo-young Lee

  • Author_Institution
    R&D Center, LG Siltron Inc., Gyeong-buk
  • fYear
    2006
  • fDate
    15-17 May 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this work, we have fabricated 8-inch SiGe wafers with the dual channel through a direct production line and the samples were mostly characterized by the line equipment. Some characteristic methods and vital specification were presented for device makers
  • Keywords
    CMOS integrated circuits; Ge-Si alloys; silicon; substrates; 8 inch; CMOS application; Si-SiGe; SiGe wafer fabrication; high quality strained-Si; relaxed SiGe virtual substrates; strained-SiGe layers grown; CMOS technology; Charge carrier processes; Electron mobility; Germanium silicon alloys; Impurities; Mass production; Rough surfaces; Silicon germanium; Substrates; Surface roughness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    1-4244-0461-4
  • Type

    conf

  • DOI
    10.1109/ISTDM.2006.246490
  • Filename
    1715984
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2764137