Title :
Formation of High Quality Strained-Si / Strained-SiGe Layers Grown on Relaxed SiGe Virtual Substrates for Advanced CMOS Application
Author :
In-kyum Kim ; Suk-june Kang ; Hyung-sang Yuk ; Dong-kun Lee ; Bo-young Lee
Author_Institution :
R&D Center, LG Siltron Inc., Gyeong-buk
Abstract :
In this work, we have fabricated 8-inch SiGe wafers with the dual channel through a direct production line and the samples were mostly characterized by the line equipment. Some characteristic methods and vital specification were presented for device makers
Keywords :
CMOS integrated circuits; Ge-Si alloys; silicon; substrates; 8 inch; CMOS application; Si-SiGe; SiGe wafer fabrication; high quality strained-Si; relaxed SiGe virtual substrates; strained-SiGe layers grown; CMOS technology; Charge carrier processes; Electron mobility; Germanium silicon alloys; Impurities; Mass production; Rough surfaces; Silicon germanium; Substrates; Surface roughness;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246490
