Title :
High-current characterization of dual-damascene copper interconnects in SiO2- and low-k interlevel dielectrics for advanced CMOS semiconductor technologies
Author :
Voldman, S. ; Gauthier, R. ; Morrisseau, K. ; Hargrove, M. ; McGahay, V. ; Gross, V.
Author_Institution :
Microelectron. Div., IBM Corp., Essex Junction, VT, USA
Abstract :
The ESD robustness of copper (Cu) interconnects in low-k interlevel dielectrics (ILD) is shown for the first time. Critical-current density to failure Jcrit, high-current resistance change ΔR/Ro, and thermal impedance θ TH are determined for Cu-based interconnects with silicon dioxide (SiO2) and low-k interlevel dielectrics. Experimental results indicate that ESD robustness of Cu-based interconnects in low-k ILD (k=2.9) is affected by low-k material (compared to Cu wires in SiO 2 ILD), yet have superior ESD robustness compared to Al-based interconnects
Keywords :
CMOS integrated circuits; copper; current density; dielectric thin films; electric resistance; electrostatic discharge; failure analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; permittivity; silicon compounds; thermal resistance; Al; Al-based interconnects; CMOS semiconductor technologies; Cu; Cu interconnects; Cu wires; Cu-SiO2-Si; Cu-based interconnects; ESD robustness; Si; SiO2 ILD; SiO2 interlevel dielectrics; critical-current density to failure; dual-damascene copper interconnects; high-current characterization; high-current resistance change; low-k ILD; low-k interlevel dielectrics; thermal impedance; CMOS technology; Capacitance; Copper; Delay; Dielectric materials; Electrostatic discharge; Integrated circuit interconnections; Robustness; Semiconductor materials; Thermal resistance;
Conference_Titel :
Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-5220-3
DOI :
10.1109/RELPHY.1999.761606
