Study of Relaxation of Strain in Patterned Structures using X-Ray Diffraction Technique

Author

Khan, Ab Rouf ; Stangl, J. ; Bauer, G. ; Buca, Dan ; Hollander, B. ; Trinkaus, H. ; Mantl, Siegfried ; Loo, Roger ; Caymax, M.

Author_Institution

Inst. for Semicond. Phys., JKU, Linz

fYear

2006

fDate

15-17 May 2006

Firstpage

1

Lastpage

2

Abstract

We investigate the strain state in patterned SiGe lines of various widths after strain relaxation by He ion implantation and annealing (Hollander et al, 2001). We expected that the relaxation in such patterned virtual substrates must be more pronounced in one direction of the stripe than the other, thereby opening a possibility for further enhancement of hole mobility. We employed high-resolution X-ray diffraction to study the relaxation of strain and to assess the structural quality of a series of SiGe striped samples with varying stripe widths from 0.82 to 100 mum, patterned in [110] direction on a (100) substrate. We see that the strain in the stripes in the two orthogonal directions is different i.e. the crystal structure of the stripes is orthorhombic

Keywords

Ge-Si alloys; X-ray diffraction; helium; ion implantation; substrates; He; He ion annealing; He ion implantation; SiGe; X-ray diffraction technique; hole mobility enhancement; patterned SiGe lines; patterned structures; strain relaxation; stripe crystal structure; stripe direction; virtual substrates; Annealing; Capacitive sensors; Germanium silicon alloys; Helium; Ion implantation; Lattices; Optical diffraction; Silicon germanium; Substrates; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Conference_Location

Princeton, NJ

Print_ISBN

1-4244-0461-4

Type

conf

DOI

10.1109/ISTDM.2006.246492

Filename

1715986