DocumentCode
2764176
Title
The effect of silicide on ESD performance
Author
Notermans, Guido ; Heringa, Anco ; Van Dort, Maarten ; Jansen, Sander ; Kuper, Fred
Author_Institution
Laser- und Medizin- Technol. gGmbH, Berlin, Germany
fYear
1999
fDate
1999
Firstpage
154
Lastpage
158
Abstract
In this paper, a new model for localized breakdown in grounded gate NMOSTs under ESD stress is developed which accounts for the reduced ESD strength in silicided devices. The model explains the impact of a stabilizing drain resistance on second breakdown current for both silicided and unsilicided ESD protection NMOSTs
Keywords
MOSFET; electric resistance; electrostatic discharge; protection; semiconductor device breakdown; semiconductor device metallisation; semiconductor device models; semiconductor device testing; ESD performance; ESD strength; ESD stress; grounded gate NMOSTs; localized breakdown model; second breakdown current; silicide effects; silicided ESD protection NMOSTs; silicided devices; stabilizing drain resistance; unsilicided ESD protection NMOSTs; Electric breakdown; Electrical resistance measurement; Electrostatic discharge; Protection; Semiconductor device modeling; Silicides; Stress; Substrates; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International
Conference_Location
San Diego, CA
Print_ISBN
0-7803-5220-3
Type
conf
DOI
10.1109/RELPHY.1999.761607
Filename
761607
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