Title :
Study of Surface Roughness and Dislocation Generation in Strained Si Layers Grown on Thin Strain-Relaxed Buffers for High Performance MOSFETs
Author :
Escobedo-Cousin, E. ; Olsen, Svein Harald ; Bull, S.J. ; O´Neill, A.G. ; Coulson, H. ; Claeys, Cor ; Loo, Roger ; Delhougne, R. ; Caymax, M.
Author_Institution :
Newcastle Univ.
Abstract :
In this work, the impact of high temperature annealing typical of CMOS processing on the surface morphology of thin SiGe SRBs is investigated for strained silicon layers above and below the critical thickness
Keywords :
Ge-Si alloys; MOSFET; buffer layers; dislocation arrays; surface morphology; surface roughness; CMOS processing; MOSFET; SiGe; dislocation generation; high temperature annealing; strained Si layers grown; strained silicon layers; surface morphology; surface roughness; thin SiGe SRB; thin strain-relaxed buffers; Annealing; Epitaxial growth; Germanium silicon alloys; MOSFETs; Optical surface waves; Rough surfaces; Silicon germanium; Surface morphology; Surface roughness; Temperature;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246495
