DocumentCode :
2764249
Title :
Analysis of Electron Mobility in Relaxed and Strained Si1-xCx Alloys
Author :
Chang, S.T. ; Lin, Colin Yu ; Liao, S.R.
Author_Institution :
Dept. of Electr. Eng., National Chung Hsing Univ., Tai-Chung
fYear :
2006
fDate :
15-17 May 2006
Firstpage :
1
Lastpage :
2
Abstract :
We have presented the theoretical model for electron mobility in strained Si1-xCx alloys. Theoretical calculations predict that electron transport is enhanced in undoped strained Si1-xCx, alloys with lower alloy scattering potential. The results show that the calculated mobilities from our model matches with the experimental results well
Keywords :
electron mobility; silicon alloys; wide band gap semiconductors; SiC; alloy scattering; electron mobility analysis; electron transport; relaxed SiC alloys; undoped strained SiC alloys; Capacitive sensors; Doping; Effective mass; Electron mobility; Impurities; Monte Carlo methods; Phonons; Scattering parameters; Semiconductor process modeling; Silicon alloys;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
Type :
conf
DOI :
10.1109/ISTDM.2006.246496
Filename :
1715990
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2764249
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