• DocumentCode
    2764249
  • Title

    Analysis of Electron Mobility in Relaxed and Strained Si1-xCx Alloys

  • Author

    Chang, S.T. ; Lin, Colin Yu ; Liao, S.R.

  • Author_Institution
    Dept. of Electr. Eng., National Chung Hsing Univ., Tai-Chung
  • fYear
    2006
  • fDate
    15-17 May 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We have presented the theoretical model for electron mobility in strained Si1-xCx alloys. Theoretical calculations predict that electron transport is enhanced in undoped strained Si1-xCx, alloys with lower alloy scattering potential. The results show that the calculated mobilities from our model matches with the experimental results well
  • Keywords
    electron mobility; silicon alloys; wide band gap semiconductors; SiC; alloy scattering; electron mobility analysis; electron transport; relaxed SiC alloys; undoped strained SiC alloys; Capacitive sensors; Doping; Effective mass; Electron mobility; Impurities; Monte Carlo methods; Phonons; Scattering parameters; Semiconductor process modeling; Silicon alloys;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    1-4244-0461-4
  • Type

    conf

  • DOI
    10.1109/ISTDM.2006.246496
  • Filename
    1715990
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2764249