Title :
A High Performance Photodetector in Standard SiGe BiCMOS Technology
Author :
Kuang-Sheng Lai ; Ji-Cheng Huang ; Hsu, K.Y.-J.
Author_Institution :
Inst. of Electron. Eng., National Tsing Hua Univ., Hsingchu
Abstract :
This paper presents a novel high performance photodetector concept. A surface photodetector (SPD) is introduced and integrated with a phototransistor (PT) to form a high performance phototransistor photodetector (PTPD). The device concept has been verified by characterizing the samples prepared with a standard 0.35 mum SiGe BiCMOS process. Compared with the reference PT of the same size, the PTPD exhibits one order of the magnitude improvement in responsivity
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; photodetectors; phototransistors; 0.35 micron; PTPD; SPD; SiGe; SiGe BiCMOS technology; magnitude improvement; phototransistor photodetector; responsivity; surface photodetector; BiCMOS integrated circuits; Dark current; Germanium silicon alloys; Page description languages; Phase change materials; Photodetectors; Phototransistors; Silicon germanium; Testing; Virtual colonoscopy;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246498
