• DocumentCode
    27643
  • Title

    Compact Modeling of Flicker Noise in HEMTs

  • Author

    Dasgupta, Avirup ; Khandelwal, Sourabh ; Chauhan, Yogesh Singh

  • Author_Institution
    Dept. of Electr. Eng., Indian Inst. of Technol. Kanpur, Kanpur, India
  • Volume
    2
  • Issue
    6
  • fYear
    2014
  • fDate
    Nov. 2014
  • Firstpage
    174
  • Lastpage
    178
  • Abstract
    In this paper, we present a physics-based compact model for low frequency noise in high electron mobility transistors (HEMTs). The model is derived considering the physical mechanisms of carrier number fluctuation and mobility fluctuation in the channel. The model is tunable and hence applicable to a wide range of HEMT devices of different geometries and construction. The model is in excellent agreement with experimental data and TCAD simulations.
  • Keywords
    carrier mobility; flicker noise; high electron mobility transistors; semiconductor device models; semiconductor device noise; HEMT devices; TCAD simulations; carrier number fluctuation; flicker noise; high electron mobility transistors; low frequency noise; mobility fluctuation; physical mechanisms; physics-based compact model for; 1f noise; Gallium nitride; HEMTs; Integrated circuit modeling; Noise; HEMT; flicker noise; noise model;
  • fLanguage
    English
  • Journal_Title
    Electron Devices Society, IEEE Journal of the
  • Publisher
    ieee
  • ISSN
    2168-6734
  • Type

    jour

  • DOI
    10.1109/JEDS.2014.2347991
  • Filename
    6878427
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=27643