Title :
Current Gain of SiGe HBTs Under High Base Doping Concentrations
Author :
Ningyue Jiang ; Zhenqiang Ma
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI
Abstract :
A new analytical expression for current gain including the neutral base recombination is developed for SiGe HBTs. With the constant Ge content constraint, the optimal Ge profile for the maximum current gain is found to be dependent on both base doping concentration and the total Ge content
Keywords :
Ge-Si alloys; doping profiles; heterojunction bipolar transistors; ion recombination; semiconductor doping; SiGe; SiGe HBT; base doping concentrations; maximum current gain; neutral base recombination; optimal germanium profile; Analytical models; Application software; Doping profiles; Germanium silicon alloys; Heterojunction bipolar transistors; Medical simulation; Niobium; Radio frequency; Silicon germanium; Voltage;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246500
