Title :
Significant improvement in electromigration of reflow-sputtered Al-0.5wt%Cu/Nb-liner dual damascene interconnects with low-k organic SOG dielectric
Author :
Usui, T. ; Watanabe, T. ; Ito, S. ; Hasunuma, M. ; Kawai, M. ; Kaneko, H.
Author_Institution :
Lab. of Microelectron. Eng., Toshiba Corp., Yokohama, Japan
Abstract :
Reflow-sputtered Al-0.5wt%Cu/Nb-liner dual damascene interconnects with low-k organic spin-on glass (SOG) passivation were fabricated for the first time. A significant improvement in median time-to-failure (MTF) for electromigration (EM) was observed when the SOG was compared to a standard TEOS passivation. This improvement is due to the low Young´s modulus of the SOG, which suppresses stress evolution in the Al interconnects near the via during EM testing
Keywords :
Young´s modulus; aluminium alloys; copper alloys; dielectric thin films; electromigration; glass; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; internal stresses; niobium; passivation; permittivity; spin coating; sputter deposition; Al interconnects; AlCu-Nb; EM testing; TEOS passivation; Young´s modulus; dual damascene interconnects; electromigration; low-k organic SOG dielectric; low-k organic spin-on glass passivation; median time-to-failure; reflow-sputtered AlCu/Nb-liner dual damascene interconnects; stress evolution; via interconnects; Artificial intelligence; Dielectrics; Electromigration; Filling; Integrated circuit interconnections; Large scale integration; Lithography; Niobium; Optical microscopy; Passivation;
Conference_Titel :
Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-5220-3
DOI :
10.1109/RELPHY.1999.761616
