Title :
Growth of Ultra-uniform B-doped Si/SiGe Multiple Quantum Wells by RTCVD for Mid-IR Applications
Author :
Zheng, Weiye ; Sturm, James C. ; Gmachl, Claire F. ; Buyuklimanli, T. ; Marino, Julio ; Denker, M.S. ; Mayer, J.T.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ
Abstract :
The authors report the growth of B-doped Si/SiGe multiple quantum wells (MQW) structures by rapid thermal chemical vapor deposition (RTCVD) for intersubband transitions with extreme uniformity and interface abruptness. An excellent well to well uniformity is reported as measured through high resolution SIMS
Keywords :
Ge-Si alloys; boron; chemical vapour deposition; elemental semiconductors; secondary ion mass spectroscopy; semiconductor doping; semiconductor growth; semiconductor quantum wells; silicon; RTCVD; Si-SiGe:B; extreme uniformity; high resolution SIMS; interface abruptness; intersubband transitions; mid IR applications; multiple quantum well growth; rapid thermal chemical vapor deposition; well to well uniformity; Boron; Doping; Germanium silicon alloys; Materials science and technology; Photonic band gap; Physics; Quantum cascade lasers; Quantum well devices; Silicon germanium; Temperature;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246502
