Channel length dependence of hot-carrier degradation of LATID-n-MOSFETs under analog operation

Author

Thewes, Roland ; Walter, Georg H. ; Brederlow, Ralf ; Schlunder, Christian ; Schwerin, Andreas V. ; Jurk, Reinhard ; Linnenbank, Carsten G. ; Lengauer, Gunter ; Schmitt-Landsiedel, Dons ; Weber, Wemer

Author_Institution

Corp. Technol., Siemens AG, Berlin, Germany

fYear

1999

fDate

1999

Firstpage

233

Lastpage

238

Abstract

We investigate the hot-carrier degradation of large angle tilted implementation drain n-MOSFETs (LATID-n-MOSFETs) using specific stress techniques related to the operating conditions of analog CMOS applications. Under these conditions, we find a hot-carrier induced damage proportional to the inverse value of the channel length. The drain current degradation caused by this damage is proportional to (channel length)^S+1, with S+1=2 in linear mode and S+1>2 in saturation mode. The physical insight achieved yields important information for analog CMOS reliability

Keywords

CMOS analogue integrated circuits; MOSFET; electric current; hot carriers; integrated circuit reliability; integrated circuit testing; LATID-n-MOSFETs; analog CMOS applications; analog CMOS reliability; analog operation; channel length; channel length dependence; drain current degradation; hot-carrier degradation; hot-carrier induced damage; large angle tilted implementation drain n-MOSFETs; linear mode; operating conditions; saturation mode; stress techniques; Analog circuits; Circuit noise; Degradation; Hot carriers; MOSFET circuits; Security; Shape; Signal design; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International

Conference_Location

San Diego, CA

Print_ISBN

0-7803-5220-3

Type

conf

DOI

10.1109/RELPHY.1999.761618

Filename

761618