DocumentCode
2764399
Title
Bound-to-Continuum Quantum Cascade Emitters for Terahertz Emission
Author
Paul, Douglas J. ; Townsend, Paul ; Lynch, Stephen A. ; Zhao, Mengying ; Ni, W.X. ; Zhang, Juyong
Author_Institution
Cavendish Lab., Cambridge Univ.
fYear
2006
fDate
15-17 May 2006
Firstpage
1
Lastpage
2
Abstract
In this paper, the first experiment results from Si/SiGe bound-to-continuum quantum cascade emitters are presented operating at THz frequencies. The quantum cascade emitters are grown by chemical vapour deposition (CVD)/gas source molecular beam epitaxy (MBE) and solid-source MBE
Keywords
Ge-Si alloys; chemical vapour deposition; elemental semiconductors; molecular beam epitaxial growth; quantum cascade lasers; semiconductor growth; silicon; submillimetre wave lasers; Si-SiGe; THz frequencies; bound-to-continuum quantum cascade emitters; chemical vapour deposition; gas source molecular beam epitaxy; solid-source MBE; terahertz emission; Doping; Frequency; Germanium silicon alloys; Molecular beam epitaxial growth; Optical scattering; Particle scattering; Quantum cascade lasers; Silicon germanium; Temperature; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location
Princeton, NJ
Print_ISBN
1-4244-0461-4
Type
conf
DOI
10.1109/ISTDM.2006.246503
Filename
1715997
Link To Document