Improvement of intermodulation distortion in microwave power amplifiers with intrinsic second-harmonic short-circuit termination

Author

Watanabe, Kazushi ; Takayama, Yoichiro ; Yamaguchi, Kazuyuki ; Fujita, Takayuki ; Maenaka, Kazusuke

Author_Institution

Univ. of Hyogo, Himeji-Shi

fYear

2006

fDate

12-15 Dec. 2006

Firstpage

1735

Lastpage

1738

Abstract

Intermodulation distortion products and their asymmetry in microwave power amplifiers were drastically improved by intrinsic drain second-harmonic short-circuit termination. The FET drain parasitic inductance was taken into account to construct a series resonant circuit with a resonant-frequency at the second-harmonic. 1 GHz- band Si MOSFET power amplifiers were fabricated and the remarkable improvement of third-order and fifth-order intermodulation distortion products and their asymmetries were achieved by the proposed second-harmonic short-circuit termination.

Keywords

MOSFET circuits; intermodulation distortion; microwave field effect transistors; microwave power amplifiers; FET drain parasitic inductance; Si MOSFET power amplifiers; intermodulation distortion; intrinsic drain second-harmonic short-circuit termination; microwave power amplifiers; resonant-frequency; FETs; Frequency; Impedance; Inductance; Intermodulation distortion; MOSFET circuits; Microwave amplifiers; Power MOSFET; Power amplifiers; RLC circuits; Microwave power amplifiers; Si MOSFET; harmonic control; intermodulation distortion;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. APMC 2006. Asia-Pacific

Conference_Location

Yokohama

Print_ISBN

978-4-902339-08-6

Electronic_ISBN

978-4-902339-11-6

Type

conf

DOI

10.1109/APMC.2006.4429744

Filename

4429744