Title :
Integration of Selective SiGe Epitaxy for Source/Drain Application in MOSFETs
Author :
Radamson, H.H. ; Hallstedt, J. ; Ostling, Mikael
Author_Institution :
Sch. of Inf. & Commun. Technol., Kungliga Tekniska Hogskolan, Kista
Abstract :
In this paper the selective epitaxy of B- and P-doped SiGe layers on either HCl-etched or un-processed Si surfaces for S/D application in CMOS structures have been investigated. The study has focused on how to obtain high quality layers and tackle subjects e.g. dopant incorporation and defect generation in these layers
Keywords :
Ge-Si alloys; MOSFET; boron; epitaxial growth; etching; phosphorus; semiconductor doping; CMOS structures; MOSFET; SiGe:B; SiGe:P; defect generation; dopant incorporation; selective epitaxy; source/drain application; unprocessed Si surfaces; Atomic measurements; Boron; Doping; Epitaxial growth; Germanium silicon alloys; Hydrogen; MOSFETs; Silicon germanium; Substrates; Uniaxial strain;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246504
