DocumentCode :
2764418
Title :
Compact device-level linearisation technique using a reduced complexity derivative superposition approach
Author :
Negra, Renato ; Ghannouchi, Fadhel M. ; Bächtold, Werner
fYear :
2006
fDate :
12-15 Dec. 2006
Firstpage :
1739
Lastpage :
1742
Abstract :
An alternative derivative superposition (DS) approach is proposed to reduce nonlinear distortions in field effect transistors (FETs). Based on the conventional DS method, the described technique offers a compromise to intermodulation correction capability and circuit complexity. Intermodulation cancellation is achieved by synthesising a small-ripple transconductance derivative for a given range of input signal levels. The impact of the proposed technique on linearity and gain degradation is analysed and evaluated experimentally. The designed two- section DS-devices show an improvement in third- order intermodulation distortion of more than 7 dB over a dynamic range of 8.4 dB without degrading gain more than 0.25 dB.
Keywords :
field effect transistors; intermodulation distortion; FET; Intermodulation cancellation; compact device-level linearisation technique; derivative superposition approach; field effect transistors; intermodulation correction; nonlinear distortions; small-ripple transconductance; third- order intermodulation distortion; Circuit synthesis; Complexity theory; Degradation; FETs; Intermodulation distortion; Linearity; Linearization techniques; Nonlinear distortion; Signal synthesis; Transconductance; Intermodulation distortion; MESFET ampliers; linearisation; microwave power ampliers; nonlinearities;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2006. APMC 2006. Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-4-902339-08-6
Electronic_ISBN :
978-4-902339-11-6
Type :
conf
DOI :
10.1109/APMC.2006.4429745
Filename :
4429745
Link To Document :
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