• DocumentCode
    2764483
  • Title

    Effective Mass Measurement: Influence of Hole Band Nonparabolicity in SiGe/Ge Quantum Wells

  • Author

    Rossner, B. ; von Kanel, H. ; Chrastina, D. ; Isella, Giovanni ; Batlogg, B.

  • Author_Institution
    Lab. for Solid State Phys., ETH Zurich
  • fYear
    2006
  • fDate
    15-17 May 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We have investigated the experimental and calculated DOS effective masses for SiGe/Ge quantum wells. We find that the apparent discrepancy between calculated effective mass and experimental results that use the Landau level spacing to determine the effective mass can be reconciled
  • Keywords
    Ge-Si alloys; Landau levels; effective mass; elemental semiconductors; germanium; semiconductor quantum wells; Landau level spacing; SiGe-Ge; effective mass measurement; hole band nonparabolicity; quantum wells; Charge carrier density; Cyclotrons; Effective mass; Frequency; Function approximation; Germanium silicon alloys; Magnetic field measurement; Physics; Silicon germanium; Solid state circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    1-4244-0461-4
  • Type

    conf

  • DOI
    10.1109/ISTDM.2006.246506
  • Filename
    1716000
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2764483