Title :
Effective Mass Measurement: Influence of Hole Band Nonparabolicity in SiGe/Ge Quantum Wells
Author :
Rossner, B. ; von Kanel, H. ; Chrastina, D. ; Isella, Giovanni ; Batlogg, B.
Author_Institution :
Lab. for Solid State Phys., ETH Zurich
Abstract :
We have investigated the experimental and calculated DOS effective masses for SiGe/Ge quantum wells. We find that the apparent discrepancy between calculated effective mass and experimental results that use the Landau level spacing to determine the effective mass can be reconciled
Keywords :
Ge-Si alloys; Landau levels; effective mass; elemental semiconductors; germanium; semiconductor quantum wells; Landau level spacing; SiGe-Ge; effective mass measurement; hole band nonparabolicity; quantum wells; Charge carrier density; Cyclotrons; Effective mass; Frequency; Function approximation; Germanium silicon alloys; Magnetic field measurement; Physics; Silicon germanium; Solid state circuits;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246506
