DocumentCode :
2764502
Title :
Influence of Collector Design on the SiGe HBT´s Quasi-Saturation Characteristics
Author :
Cai, Wenlong ; Jie Zheng ; Edward Preisler ; Paul Hurwitz ; Racanelli, M.
Author_Institution :
Jazz Semicond., Newport Beach, CA
fYear :
2006
fDate :
15-17 May 2006
Firstpage :
1
Lastpage :
2
Abstract :
In this paper we examine the SiGe HBT´s current-voltage characteristics where Jc is several times the Kirk current density JHC = qNepi vsat. We analyze the QS characteristics by comparing the NPN´s with different intrinsic collector doping profiles fabricated on the same wafer. Data from NPN´s made from various thicknesses and concentrations of the epi-layer are also presented
Keywords :
Ge-Si alloys; current density; doping profiles; heterojunction bipolar transistors; Kirk current density; SiGe; collector design; collector doping profiles; current-voltage characteristics; heterojunction bipolar transistor; quasisaturation characteristics; Current density; Current-voltage characteristics; Doping profiles; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Kirk field collapse effect; Power amplifiers; Power generation; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
Type :
conf
DOI :
10.1109/ISTDM.2006.246507
Filename :
1716001
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2764502
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