Title :
Highly Tensile Strained Silicon Carbon Phosphorus Alloys Epitaxially Grown into Recessed Source Drain Areas of NMOS devices
Author :
Bauer, Matthias ; Machkauotsan, V. ; Arena, Chantal
Author_Institution :
ASM America, Phoenix, AZ
Abstract :
Growth rates up to 82 nm/min (at 550degC) led to films incorporating up to 3.6% substitutional carbon according to Vegard´s law; (2.8% after (Kelires, 1998)) and an alpha/epi growth rate ratio of 1. The films were fully strained with perpendicular lattice constants of down to 5.363 Aring and displayed stress well above 2 GPa. Moreover, these films could be heavily doped with P and led to resistivities as low as 0.5 - 1.5 mOmegacm
Keywords :
MIS devices; epitaxial growth; heavily doped semiconductors; lattice constants; semiconductor growth; silicon compounds; 550 C; NMOS devices; SiCP; Vegard law; alpha/epi growth rate ratio; displayed stress; epitaxial growth; highly tensile strained silicon carbon phosphorus alloys; lattice constants; recessed source drain areas; Amorphous materials; Electron mobility; Epitaxial growth; Gases; Lattices; MOS devices; Semiconductor films; Silicon alloys; Silicon carbide; Temperature;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246508
