Title :
Leakage current degradation and carrier conduction mechanisms for Cu/BCB damascene process under bias-temperature stress
Author :
Kim, Sang U. ; Cho, Taiheui ; Ho, Paul S.
Author_Institution :
Sematech, Austin, TX, USA
Abstract :
In this study, the leakage current degradation and conduction mechanisms for the Cu-BCB damascene process module under bias-temperature stress were investigated in detail. New carrier conduction and leakage current failure mechanisms were uncovered. The space charge limited current was found to be a dominant leakage current mechanism. Models were proposed to explain the anomalous leakage currents observed with high and low bias field stresses. We believe that the results obtained in this study can be equally applicable to any Cu-low k dielectric material combination
Keywords :
carrier mobility; copper; dielectric thin films; integrated circuit interconnections; integrated circuit metallisation; integrated circuit modelling; integrated circuit reliability; integrated circuit testing; leakage currents; permittivity; polymer films; thermal stresses; Cu; Cu-BCB damascene process module; Cu-low k dielectric material combination; Cu/BCB damascene process; bias field stresses; bias-temperature stress; carrier conduction; carrier conduction mechanisms; conduction mechanisms; leakage current degradation; leakage current failure mechanisms; leakage current mechanism; leakage currents; models; space charge limited current; Copper; Degradation; Electric breakdown; Etching; Failure analysis; Leakage current; Silicon; Temperature; Testing; Thermal stresses;
Conference_Titel :
Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-5220-3
DOI :
10.1109/RELPHY.1999.761626
