Title :
A Tensorial High-Field Electron Mobility Model for Strained Silicon
Author :
Dhar, Sudipta ; Kosina, Hans ; Karlowatz, G. ; Ungersboeck, E. ; Grasser, Tibor ; Selberherr, Siegfried
Author_Institution :
Inst. for Microelectron., TU Wien
Abstract :
Application of stress to Si causes a deviation of its lattice constant from the equilibrium value, thereby modifying the electronic band structure. A phenomenological approach to calculate the mobility tensor for electrons in strained Si at high electric fields has been proposed. The model is intended for implementation in drift-diffusion based device simulators
Keywords :
Monte Carlo methods; band structure; electron mobility; silicon; tensors; device simulators; drift-diffusion; electronic band structure; high electric fields; mobility tensor calculation; strained silicon; tensorial high-field electron mobility; Compressive stress; Electron mobility; Interpolation; Laboratories; Lattices; Mathematical model; Microelectronics; Monte Carlo methods; Silicon; Tensile stress;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246511
