Title :
Strained and Relaxed SiGe for High-Mobility MOSFETs
Author :
Lee, Minjoo Larry ; Antoniadis, Dimitri A. ; Fitzgerald, E.A.
Author_Institution :
MIT, Cambridge, MA
Abstract :
In this talk, the authors first review the earlier results on high-mobility, biaxially strained Si, SiGe, and Ge channels grown on relaxed Si1-xGex/Si(001) buffers. Next, they discuss their experiments with SiGe growth on Si(110) and (111), with a particular emphasis on the unique dislocation morphologies that emerge. The author will also show that the growth kinetics and dislocation behavior on (110) and (111) have significance for SiGe source/drain technology
Keywords :
Ge-Si alloys; MOSFET; dislocation structure; elemental semiconductors; germanium; semiconductor growth; silicon; SiGe; SiGe growth; dislocation behavior; dislocation morphologies; growth kinetics; high-mobility MOSFET; relaxed SiGe; source/drain technology; strained SiGe; Capacitive sensors; Charge carrier processes; Electron mobility; Germanium silicon alloys; Kinetic theory; MOSFETs; Semiconductor films; Silicon germanium; Substrates; Surface morphology;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246514
