• DocumentCode
    2764675
  • Title

    Effective Surface Treatments for Selective Epitaxial SiGe Growth in Locally Strained pMOSFETs

  • Author

    Liao, Chin-I ; Chen, Yi-Cheng ; Cheng, Po-Lun ; Wang, Hsiang-Ying ; Chien, Chin-Cheng ; Yang, Chan-Lon ; Huang, K.T. ; Tzou, S.F. ; Tang, Jinsong ; Kodali, Rohini ; Washington, Lori ; Chang, Vincent C. ; Fu, Tony ; Cho, Yonah

  • Author_Institution
    United Microelectron. Corp., Tainan
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Cyclical wet clean in DI-O3/SC1/DHF and low temperature bake in HCl/H2 are presented as effective surface treatments for selective SiGe epitaxial deposition used to fabricate embedded SiGe pMOSFETs. The presented methods are most effective for device structures under limited chemical and thermal budgets
  • Keywords
    Ge-Si alloys; MOSFET; epitaxial growth; low-temperature techniques; surface treatment; SiGe; cyclical wet clean; locally strained pMOSFET; low temperature bake; selective epitaxial growth; surface treatments; Chemicals; Germanium silicon alloys; Hafnium; MOSFETs; Protection; Silicon germanium; Surface cleaning; Surface morphology; Surface treatment; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    1-4244-0461-4
  • Type

    conf

  • DOI
    10.1109/ISTDM.2006.246517
  • Filename
    1716011
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2764675